In this work, a one dimensional approach is presented for modelling the effect of the incidence angle, varying from 0 rad to π/2 rad, and the intensity of radio waves on the performance of a polycrystalline silicon solar cell under constant multispectral illumination. By solving the continuity equation in steady state, we derived the expression of the density of excess minority carriers, the photocurrent density, the photovoltage, the electric power and their dependence on the incidence angle and the intensity of the electromagnetic field is analyzed. Using the electric power curves versus junction dynamic velocity we determined the electric power lost at the junction, the maximum electric power and we calculated the conversion efficiency for various incidence angle and intensity of the electromagnetic field. The leakage photocurrent density, deduced from the photocurrent density curves versus junction dynamic velocity, and the electric power lost at the junction allowed us to calculate the shunt resistance of the solar cell according to the incidence angle and the intensity of the electromagnetic field. The numerical data show the negative effect of radios waves on the performance of a silicon solar cell.