Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals
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1
Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskoho Str., Lviv-79017, Ukraine
2
The Faculty of Mechanical Engineering and Aeronautics, Department of Aerospace Engineering, Rzeszow University of Technology, al. Powstańców Warszawy 8, 35-959 Rzeszow, Poland
3
Institute of Materials Engineering, College of Natural Sciences, University of Rzeszow, ul. Pigonia 1, 35-310 Rzeszów, Poland
Corresponding author
Marta Żyłka
The Faculty of Mechanical Engineering and Aeronautics, Department of Aerospace Engineering,
Rzeszów University of Technology,
Aleja Powstańców Warszawy 8, 35-959 Rzeszow, Poland
Adv. Sci. Technol. Res. J. 2023; 17(2):226-231
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ABSTRACT
Changes in the resistance of single crystals of p-type conductivity silicon under the action of mechanical loading were investigated in this research. Also, non-irradiated and pre-irradiated X-rays experimental samples were studied. It was found that at small deformation values when they are at the initial stage of the action of elastic deformation, a section forms and increases, on which the resistance practically does not depend on the applied mechanical load.
In irradiated crystals, at small deformation values, electron generation processes dominate, which then recombine with the main carriers – holes. The consequence of such processes is the appearance of a maximum increase in electrical resistance at the initial stage of elastic deformation of experimental samples irradiated with X-rays. Charge carrier generation processes begin to dominate with further deformation. Such processes occur as a result of the release of acceptor centers from other complex defects, which are destroyed during the deformation of the Si crystal and captured by mobile dislocations. Thus, the processes of generation of charge carriers prevail over the processes of gettering and, accordingly, a mechano-stimulated decrease in the electrical resistance of p-Si samples occurs.