INVESTIGATION ON SILICON SOLAR CELL CAPACITANCE AND ITS DEPENDENCE ON BOTH TEMPERATURE AND INCIDENCE ANGLE
 
 
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Semiconductors and Solar Energy Laboratory, Faculty of Science and Technique, Cheikh Anta Diop University, BP5005, Dakar, Senegal
Publish date: 2014-11-23
 
Adv. Sci. Technol. Res. J. 2014; 8(24):9–12
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ABSTRACT
The aim of this work is to investigate a theoretical study of a vertical junction silicon solar cell capacitance under monochromatic illumination. By solving the continuity equation and using a one dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both temperature and incidence angle on the solar cell capacitance.