The thermal desorption of Xe implanted into the Ge samples are considered in the paper. The ions of that heavy inert gas are implanted into the target with the energies 100 keV and 150 keV and fluence of 2×1016 cm-2. Abrupt emissions of Xe were registered using thermal desorption spectrometry (TDS) in the temperature range 800 K-840 K. A single TDS peak (width of several K up to ~25 K, depending on heating profile ramp rate) is most probably a result of gas release from pressurized Xe filled cavities formed by vacancy coalescence. The estimated values of the adsorption activation energy values are: 3.15 eV and 2.1 eV for the implantation energies 100 keV and 150 keV, respectively. These values are comparable to those obtained for Ar and Kr implanted into Ge as well as heavy inert gases in silicon samples.