Thermal Desorption of Argon Implanted into Gallium Arsenide
			
	
 
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				1
				Institute of Physics, Maria Curie Sklodowska University in Lublin, Pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland
				 
			 
						
				2
				Faculty of Electrical Engineering and Computer Science, Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
				 
			 
										
				
				
		
		 
			
			
		
		
		
		
		
		
	
							
															    		
    			 
    			
    				    					Autor do korespondencji
    					    				    				
    					Krzysztof  Pyszniak   
    					Institute of Physics, Maria Curie Sklodowska University in Lublin, Pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland
    				
 
    			
				 
    			 
    		 		
			
												 
		
	 
		
 
 
Adv. Sci. Technol. Res. J. 2022; 16(4):318-326
		
 
 
SŁOWA KLUCZOWE
DZIEDZINY
STRESZCZENIE
Thermal desorption of Ar implanted with energies 150 keV and 100 keV with fluence 1×10^16 cm^-2 into GaAs is considered. A sudden release of Ar is observed in temperature range 1100 -1180 K as a single narrow peak in TDS (Thermal Desorption Spectroscopy) spectra. This is accompanied by a strong background signal from atmospheric Ar  trapped in various parts of the spectrometer. Desorption peak shift analysis allows estimation of desorption activation energy values - these are 3.6 eV and 2.5 eV for implantation energies 150 keV and 100 keV, respectively. These results are comparable to that measured for Ar implanted into germanium target.