The performance of solar cells is strongly influenced by the temperature-dependent properties of their constituent energy materials. This research investigates the charge carrier characteristics within Group III Arsenide-based energy materials such as AlAs, GaAs, and InAs, and compares their properties with the conventional Si solar cells under varying environmental conditions. Numerical analysis has been performed using MATLAB to evaluate the temperature dependence of key charge carrier transport parameters, including diffusion coefficients, carrier concentrations, and photo absorption characteristics. The relationship between incident photon flux density and temperature has also been investigated to assess its impact on charge generation and transport. Furthermore, the variation of absorption coefficients with temperature has been analyzed by studying penetration depth, providing a deeper understanding of light–matter interactions within the materials. The effects of temperature on electron and hole concentrations in the conduction and valence bands, as well as their rates of change, have been systematically investigated. The results have revealed significant temperature-induced variations in charge carrier dynamics and optical properties, highlighting the potential of Group III Arsenide materials for highly efficient solar energy conversion. These findings contribute to a deeper understanding of the thermal behavior of advanced energy materials and provide valuable guidance for the design and optimization of next-generation photovoltaic cells operating under diverse environmental conditions.