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Thermal Desorption of Argon Implanted into Gallium Arsenide
 
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1
Institute of Physics, Maria Curie Sklodowska University in Lublin, Pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland
 
2
Faculty of Electrical Engineering and Computer Science, Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
 
 
Autor do korespondencji
Krzysztof Pyszniak   

Institute of Physics, Maria Curie Sklodowska University in Lublin, Pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland
 
 
Adv. Sci. Technol. Res. J. 2022; 16(4):318-326
 
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STRESZCZENIE
Thermal desorption of Ar implanted with energies 150 keV and 100 keV with fluence 1×10^16 cm^-2 into GaAs is considered. A sudden release of Ar is observed in temperature range 1100 -1180 K as a single narrow peak in TDS (Thermal Desorption Spectroscopy) spectra. This is accompanied by a strong background signal from atmospheric Ar trapped in various parts of the spectrometer. Desorption peak shift analysis allows estimation of desorption activation energy values - these are 3.6 eV and 2.5 eV for implantation energies 150 keV and 100 keV, respectively. These results are comparable to that measured for Ar implanted into germanium target.
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