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Open Access
vol. 8, 24, 2014
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INVESTIGATION ON SILICON SOLAR CELL CAPACITANCE AND ITS DEPENDENCE ON BOTH TEMPERATURE AND INCIDENCE ANGLE
Moustapha Sané 1
 
 
 
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Ukryj
1
Semiconductors and Solar Energy Laboratory, Faculty of Science and Technique, Cheikh Anta Diop University, BP5005, Dakar, Senegal
 
 
Data publikacji: 23-11-2014
 
 
Adv. Sci. Technol. Res. J. 2014; 8(24):9-12
DOI: https://doi.org/10.12913/22998624/559
 
 
Artykuł (PDF)
 
SŁOWA KLUCZOWE
vertical junction
capacitance
temperature
incidence angle
 
STRESZCZENIE
The aim of this work is to investigate a theoretical study of a vertical junction silicon solar cell capacitance under monochromatic illumination. By solving the continuity equation and using a one dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both temperature and incidence angle on the solar cell capacitance.
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